| PART |
Description |
Maker |
| SSM3K16FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
From old datasheet system
High Speed Switching Applications Analog Switching Applications 高速开关应用模拟开关应
|
Toshiba Semiconductor
Toshiba, Corp.
|
| KSC2335F KSC2335 |
High Speed/ High Voltage Switching
High Speed, High Voltage Switching
NPN Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| SSM6N16FE |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
High Speed Switching Applications Analog Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2555 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING AND HIGH SPEED DC-DC CONVERTER APPLICATIONS
|
TOSHIBA
|
| 2SK2348 |
N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications
High-Voltage/ High-Speed Switching Applications
|
Sanyo Semicon Device
|
| 2SK2037 E001426 SK2037 |
N CHANNEL TYPE (HIGH SPEED/ ANALOG SWITCHING APPLICATIONS)
HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS
TOSHIBA FIELD EFFECT TRANSISTOR SILICON CHANNEL TYPE
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HSU226 |
Diodes>Switching
Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
| BAR99 Q62702-A388 |
Silicon Switching Diode (For high-speed switching)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| H7N0608AB |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
